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gan 78We report on deeply scaled AlNGaN HEMTs demonstrating power added efficiency (PAE) of 56% and 780 mWmm output power at 94 GHz. This hh transistor efficiency at W-band is enabledAfter the first attempts of selective area growth (SAG) of GaN [78], [79], this process has been proposed for different purposes, such as for the fabrication of non-alloyed Ohmic